| PART |
Description |
Maker |
| KVR133X64C3SS128 KVR133X64C3SS_128 KVR133X64C3SS/1 |
128MB 16M x Bit PC133 CL3 Low Profile 168-Pin Dimm
128MB6x位的PC133 CL3超薄168针DIMM
|
Kingston Technology
ETC[ETC]
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| KVR133X64C3L512 KVR133X64C3L_512 KVR133X64C3L/512 |
512MB 16M x Bit PC133 CL3 Low Profile 168-Pin Dimm
512MB6x位的PC133 CL3超薄168针DIMM
|
Kingston Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| KVR133X64C3Q128 KVR133X64C3Q_128 KVR133X64C3Q/128 |
128MB 16M x Bit PC133 CL3 Low Profile 168-Pin Dimm
128MB6x位的PC133 CL3超薄168针DIMM
|
Kingston Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| KVR133X64C3/512 |
512Mb 64M x 64-Bit PC133 CL3 168-Pin DIMM Module
|
Kingston Technology
|
| KVR133X64C2/256 |
256MB 32M x 64-Bit PC133 CL2 168-Pin DIMM Module
|
Kingston Technology
|
| K9F5608U0C-VIB0 K9F5608Q0C-HIB0 K9F5608U0C-HIB0 K9 |
TV 3C 3#20 PIN WALL RECP 512Mb/256Mb 1.8 NAND闪存勘误
512Mb/256Mb 1.8V NAND Flash Errata 512Mb/256Mb 1.8 NAND闪存勘误
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HB56SW3272ESK HB56SW3272ESK-6 HB56SW3272ESK-5 |
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module(36 pcs of 16M x 4 components)
|
Hitachi Semiconductor
Hitachi,Ltd.
|
| V436516Z04VTG-75 |
3.3 VOLT 16M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SODIMM
|
MOSEL[Mosel Vitelic, Corp]
|
| V436416S04VCTG-75 |
3.3 VOLT 16M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM MODULE
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic, Corp.
Mosel Vitelic Corp
|
| V436516S04VATG-75 |
3.3 VOLT 16M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM MODULE
|
MOSEL[Mosel Vitelic, Corp]
|
| V436516S04VATG-75 |
3.3 VOLT 16M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM MODULE
ER 7C 7#16 PIN RECP BOX
|
Mosel Vitelic Corp
Mosel Vitelic Corp
Mosel Vitelic, Corp.
|
| HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG
Infineon Technologies AG
|
